? semiconductor components industries, llc, 2012 june, 2012 ? rev. p0 1 publication order number: nttfs3a08p/d nttfs3a08p product preview power mosfet ? 20 v, ? 14 a, single p ? channel, 8fl features ? ultra low r ds(on) to minimize conduction losses ? 8fl 3.3 x 3.3 x 0.8 mm for space saving and excellent thermal conduction ? esd protection level of 5 kv per jesd22 ? a114 ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? battery/switch ? high side load switch ? optimized for power management applications for portable products such as media tablets, ultrabook pcs and cellphones maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 8 v continuous drain current r ja (note 1) steady state t a = 25 c i d ? 14 a t a = 85 c ? 10 power dissipation r ja (note 1) t a = 25 c p d 2.2 w continuous drain current r ja 10 s (note 1) t a = 25 c i d ? 20 a t a = 85 c ? 15 power dissipation r ja 10 s (note 1) t a = 25 c p d 4.5 w continuous drain current r ja (note 2) t a = 25 c i d ? 9 a t a = 85 c ? 6 power dissipation r ja (note 2) t a = 25 c p d 0.84 w pulsed drain current t a = 25 c, t p = 10 s i dm ? 43 a operating junction and storage temperature t j , t stg ? 55 to +150 c esd (hbm, jesd22 ? a114) v esd 5000 v source current (body diode) i s ? 6 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 sq ? in pad, 1 oz cu. 2. surface ? mounted on fr4 board using the minimum recommended pad size. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. ordering information http://onsemi.com device package shipping ? v (br)dss r ds(on) max i d max ? 20 v 6.7 m @ ? 4.5 v ? 14 a p ? channel mosfet ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. wdfn8 ( 8fl) case 511ab marking diagram 9.0 m @ ? 2.5 v NTTFS3A08PTAG wdfn8 (pb ? free) 1500 / tape & reel (note: microdot may be in either location) 1 xxxx = specific device code a = assembly location y = year ww = work week = pb ? free package 1 nttfs3a08ptwg wdfn8 (pb ? free) 1500 / tape & reel xxxx ayww d d d d s s s g d g
nttfs3a08p http://onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction ? to ? ambient ? steady state (note 3) r ja 56.5 c/w junction ? to ? ambient ? steady state (note 4) r ja 147.6 junction ? to ? ambient ? (t 10 s) (note 3) r ja 27.5 3. surface ? mounted on fr4 board using 1 sq ? in pad, 1 oz cu. 4. surface ? mounted on fr4 board using the minimum recommended pad size (40 mm 2 , 1 oz. cu). electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j tbd mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 16 v t j = 25 c ? 1 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v 5 a on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.4 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j tbd mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v i d = ? 12 a 4.9 6.7 m v gs = ? 2.5 v i d = ? 10 a 6.9 9.0 forward transconductance g fs v ds = ? 1.5 v, i d = ? 8 a tbd s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 10 v 5000 pf output capacitance c oss 600 reverse transfer capacitance c rss 500 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 8 a 54.0 nc threshold gate charge q g(th) 2.0 gate ? to ? source charge q gs 6.5 gate ? to ? drain charge q gd 14.0 switching characteristics (note 6) turn ? on delay time t d(on) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 8 a, r g = 6.0 12 ns rise time t r 56 turn ? off delay time t d(off) 250 fall time t f 165 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 6 a t j = 25 c ? 0.7 ? 1.0 v reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = ? 6 a 207 ns charge time t a 45 discharge time t b 162 reverse recovery charge q rr 234 nc 5. pulse test: pulse width = 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
nttfs3a08p http://onsemi.com 3 package dimensions wdfn8 3.3x3.3, 0.65p case 511ab issue d m 1.40 1.50 0 ??? 1.60 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 5 6 top view side view bottom view d1 e1 d e b a 0.20 c 0.20 c 2x 2x dim min nom millimeters a 0.70 0.75 a1 0.00 ??? b 0.23 0.30 c 0.15 0.20 d d1 2.95 3.05 d2 1.98 2.11 e e1 2.95 3.05 e2 1.47 1.60 e 0.65 bsc g 0.30 0.41 k 0.65 0.80 l 0.30 0.43 l1 0.06 0.13 a 0.10 c 0.10 c detail a 14 8 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 6x c 4x c seating plane 5 max 0.80 0.05 0.40 0.25 3.15 2.24 3.15 1.73 0.51 0.95 0.56 0.20 m *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.42 0.75 2.30 3.46 package 8x 0.055 0.059 0 ??? 0.063 12 0.028 0.030 0.000 ??? 0.009 0.012 0.006 0.008 0.116 0.120 0.078 0.083 0.116 0.120 0.058 0.063 0.026 bsc 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 0.037 0.022 0.008 min nom inches max 7 8 pitch 3.60 0.57 0.47 outline dimension: millimeters 3.30 bsc 3.30 bsc 0.130 bsc 0.130 bsc 2.37 0.66 4x e3 0.23 0.30 0.40 0.009 0.012 0.016 e3 4x on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nttfs3a08p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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